The photodiodes for optical data communication are not only available in different data rates and wavelengths, but also as a 1x1 chip, or 1x2, 1x4, 1x8 or 1x12 array
Highspeed Photodiodes
Our decades of experience in developing and manufacturing 850 nm PIN diodes mean that TRUMPF high-speed photodiodes meet the highest demands for performance, efficiency and reliability. They are available for data rates of up to 112 Gbps, in the form of a chip or array in each case.
Benefit from high response sensitivity with a low dark current at the same time.
Comprehensive test and qualification procedures ensure top reliability.
In addition to photodiodes with 850 nm wavelength, longer wavelengths are also available.
In addition to photodiodes, TRUMPF also offers high-speed VCSELs, i.e. pairs that are matched to one another.
Receiver element for transceivers, AOCs, and on-board optics
The matching counterpart for our datacom VCSEL.
100G photodiode with 840 - 960 nm
This PIN photodiode has an active surface with a diameter of 25 µm and is suitable for data rates up to 100 Gbps PAM4.
56G photodiode with 850 nm
This PIN photodiode has an active surface with a diameter of 38 µm and is suitable for data rates up to 56 Gbps PAM4.
25G photodiode with 850 nm
This PIN photodiode has an active surface of 42 µm in diameter and is suitable for data rates of up to 25 Gbps.
14G photodiode with 850 nm
With an active surface of 55 µm in diameter, this PIN photodiode is designed for data rates of up to 14 Gbps.
10G photodiode with 850 nm
This PIN photodiode has an active surface of 70 µm in diameter and is suitable for data rates of up to 10 Gbps.
This product range and information may vary depending on the country. Subject to changes to technology, equipment, price, and range of accessories. Please get in touch with your local contact person to find out whether the product is available in your country.